| PART |
Description |
Maker |
| FGA272-638G FGA303-638G FGAX600-638G FGA304-638G F |
272 POS 1.27MM BGA ADAPTER BGA272, IC SOCKET
303 POS 1.27MM BGA ADAPTER BGA303, IC SOCKET
600 POS 1.27MM BGA EXTRACTION ADAPTER BGA600, IC SOCKET
304 POS 1.27MM BGA ADAPTER BGA304, IC SOCKET
168 POS 1.27MM BGA EXTRACTION ADAPTER BGA168, IC SOCKET
304 POS 1.27MM BGA EXTRACTION ADAPTER
255 POS 1.27MM BGA EXTRACTION ADAPTER
357 POS 1.27MM BGA ADAPTER
560 POS 1.27MM BGA ADAPTER
|
Advanced Interconnections, Corp.
ADVANCED INTERCONNECTIONS CORP
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDZ293P06 FDZ293P |
P-Channel 2.5 V Specified PowerTrench? BGA MOSFET
P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC440GX-3FB533C IBM25PPC440GX-3CB533C IBM25P |
32-BIT, 533 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 533 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
32-BIT, 667 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
|
Mitsubishi Electric, Corp.
|
| FDZ7296 |
30V N-Channel PowerTrenc BGA MOSFET
30V N-Channel PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IS61NVP51272-250B1 IS61NVP51272-250B1I IS61NVP1024 |
512K X 72 ZBT SRAM, 2.6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
1M X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
1M X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
512K X 72 ZBT SRAM, 3.1 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
|
Integrated Silicon Solution, Inc.
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| IBM25PPC750FX-GB0132T IBM25PPC750FX-EB1032T IBM25P |
32-BIT, 600 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
32-BIT, 733 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
32-BIT, 700 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
|
Fox Electronics
|
| FW80321M600SL6R3 FW80321M400SL6R2 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
|
